advanced power n-channel enhancement mode electronics corp. power mosfet simple drive requirement bv dss 100v lower gate charge r ds(on) 16.5m fast switching characteristics i d 31.7a rohs compliant & halogen-free description absolute maximum ratings symbol units v ds v v gs v i d @t c =25 a i d @t c =100 a i dm a p d @t c =25 w p d @t a =25 w t stg t j symbol value units rthj-c maximum thermal resistance, junction-case 3.4 /w rthj-a maximum thermal resistance, junction-ambient 65 /w data and specifications subject to change without notice AP55T10GI-HF halogen-free product parameter rating drain-source voltage 100 gate-source voltage + 20 continuous drain current, v gs @ 10v 31.7 storage temperature range continuous drain current, v gs @ 10v 20 pulsed drain current 1 120 total power dissipation 36.7 -55 to 150 total power dissipation 1.92 operating junction temperature range -55 to 150 201208271 thermal data parameter 1 g d s a p55t10 series are from advanced power innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. it provides the designer with an extreme efficient device for use in a wide range of power applications. the to-220cfm package is widely preferred for all commercial-industrial through hole applications. the mold compound provides a high isolation voltage capability and low thermal resistance between the tab and the external heat-sink. g d s to-220cfm(i)
electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =250ua 100 - - v r ds(on) static drain-source on-resistance 2 v gs =10v, i d =24a - - 16.5 m ? v gs(th) gate threshold voltage v ds =v gs , i d =250ua 2 - 5 v g fs forward transconductance v ds =10v, i d =24a - 44 - s i dss drain-source leakage current v ds =80v, v gs =0v - - 25 ua i gss gate-source leakage v gs = + 20v, v ds =0v - - + 100 na q g total gate charge i d =24a - 70 112 nc q gs gate-source charge v ds =80v - 16 - nc q gd gate-drain ("miller") charge v gs =10v - 34 - nc t d(on) turn-on delay time v ds =50v - 19 - ns t r rise time i d =10a - 27 - ns t d(off) turn-off delay time r g =3.3 -37- ns t f fall time v gs =10v - 17 - ns c iss input capacitance v gs =0v - 3400 5440 pf c oss output capacitance v ds =25v - 320 - pf c rss reverse transfer capacitance f=1.0mhz - 200 - pf r g gate resistance f=1.0mhz - 1 2 source-drain diode symbol parameter test conditions min. typ. max. units v sd forward on voltage 2 i s =24a, v gs =0v - - 1.3 v t rr reverse recovery time i s =10a, v gs =0v - 70 - ns q rr reverse recovery charge di/dt=100a/s - 250 - nc notes: 1.pulse width limited by max. junction temperature. 2.pulse test this product is sensitive to electrostatic discharge, please handle with caution. use of this product as a critical component in life support or other similar systems is not authorized. apec does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. apec reserves the right to make changes without further notice to any products herein to improve reliability, function or design. 2 AP55T10GI-HF
a p55t10gi-h f fig 1. typical output characteristics fig 2. typical output characteristics fig 3. normalized bv dss v.s. junction fig 4. normalized on-resistance temperature v.s. junction temperature fig 5. forward characteristic of fig 6. gate threshold voltage v.s. reverse diode junction temperature 3 0 40 80 120 160 0 4 8 12 16 20 v ds , drain-to-source voltage (v) i d , drain current (a) t c =25 o c 10v 9.0v 8.0v 7.0v v g = 6.0v 0 20 40 60 80 100 120 0481216 v ds , drain-to-source voltage (v) i d , drain current (a) 10v 9.0v 8.0v 7.0v v g = 6.0v t c = 150 o c 0.4 0.8 1.2 1.6 2.0 2.4 2.8 -50 0 50 100 150 t j , junction temperature ( o c) normalized r ds(on) i d =24a v g =10v 0 10 20 30 40 0 0.2 0.4 0.6 0.8 1 1.2 1.4 v sd , source-to-drain voltage (v) i s (a) t j =25 o c t j =150 o c 0 0.4 0.8 1.2 1.6 -50 0 50 100 150 t j ,junction temperature ( o c) normalized v gs(th) i d =250ua 0.8 0.9 1 1.1 1.2 -50 0 50 100 150 t j , junction temperature ( o c) normalized bv dss i d =1ma
ap55t10gi-h f fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. maximum continuous drain fig 12. gate charge waveform current v.s. case temperature 4 0 2 4 6 8 10 12 0306090 q g , total gate charge (nc) v gs , gate to source voltage (v) i d =24a v ds =80v q v g 10v q gs q gd q g charge 0 1000 2000 3000 4000 5000 1 5 9 13 17 21 25 29 v ds ,drain-to-source voltage (v) c (pf) f =1.0mh z c iss c oss c rss 0.001 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 10 t , pulse width (s) normalized thermal response (r thjc ) p dm duty factor = t/t peak t j = p dm x r thjc + t c t t 0.02 0.01 0.05 0.1 0.2 duty factor=0.5 single pulse 0.1 1 10 100 1000 0.01 0.1 1 10 100 1000 v ds , drain-to-source voltage (v) i d (a) t c =25 o c s ingle pulse 10us 100us 1ms 10ms 100ms 1s dc operation in this area limited by r ds(on) 0 10 20 30 40 25 50 75 100 125 150 t c , case temperature ( o c ) i d , drain current (a)
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